TOKYO, December 12, 2025--(BUSINESS WIRE)--Kioxia Corporation, a world leader in memory solutions, today announced the development of highly stackable oxide-semiconductor channel transistors that will ...

On June 4, 1968, Robert Dennard was granted a patent for a single transistor, single capacitor DRAM cell design idea. This doesn’t sound earth-shattering today, but back in the sixties, this was a ...

Dynamic random access memory (DRAM) remains a cornerstone of modern electronic systems, enabling rapid data storage and retrieval. Recent developments have focused on capacitorless designs – notably ...

Data can be read by applying a small pulse to the selected bit-cell transistor and comparing the channel current to the current of a reference cell. Implemented in a standard 90-nm SOI process, the ...

Showcase the technology of highly stackable oxide-semiconductor channel transistors TOKYO — Kioxia Corporation, a world leader in memory solutions, today announced the development of highly stackable ...