To push access times toward those of SRAM while achieving much higher densities, embedded DRAM needs a structure that differs from both commodity DRAM and conventional embedded DRAM. The challenge is ...

March 24, 2022 -- The Flat Field Transistor (FFT) developed by Semiwise offers a solution to the DRAM scaling problems improving dramatically the margins of the DRAM sense amplifiers. Although the ...

NEO Semiconductor has announced that it has developed the "world's first 3D NAND-like DRAM cell array," which aims to increase DRAM chip density using established 3D stacking technology. Designed to ...

“More than 50% reduction of the statistical variability compared to bulk mosfets with identical dimensions”, is the claim of Glasgow-based Semiwise for its ‘flat field transistor’, which “is ...

NEO Semiconductor is once again announcing a new technology that hopes to revolutionize the state of DRAM memory. Today, the company unveiled two new 3D X-DRAM cell designs, 1T1C and 3T0C. The ...

At the recent 2020 International Electron Devices Meeting (IEDM), Imec presented a paper on a novel capacitor-less DRAM cell architecture. DRAM is used for main memory in systems, and today’s most ...

The concept of 1-Transistor Random-Access Memory (1TRAM) was first introduced by MoSys Inc. and manufactured by Taiwan Semiconductor Manufacturing Co. (TSMC) in a standard CMOS process. 1TRAM uses a ...

Since its introduction, DRAM technology has been a commodity product driven by cost and razor-thin profits. DRAM's achievement over the years is extraordinary; its capacity in 1970 was 1 Kb and today ...