As mentioned in a previous post, the Flemish Interuniversity Microelectronics Consortium, IMEC, has decided to include the interests of DRAM and non-volatile memory designers in their 32nm half-pitch ...
(MENAFN- PR Newswire) LEUVEN, Belgium, Dec. 15, 2020 /PRNewswire/ -- This week, at the 2020 International Electron Devices Meeting, imec, a world-leading research and innovation hub in nanoelectronics ...
TOKYO — Toshiba Corp. has developed a one-transistor, no-capacitor cell structure that it claims solves the difficulties encountered in producing DRAMs in sub-0.1-micron process technology. The ...
DRAM makes up the bulk of non-volatile memory in computer systems. Much has been done lately to mix non-volatile storage with DRAM. However, DRAM’s performance and capacity still win out when it comes ...
New materials engineering solutions from Applied Materials help improve DRAM performance by 30%, power by 15% and area by 20%. SANTA CLARA, Calif., May 05, 2021 (GLOBE NEWSWIRE) -- Applied Materials, ...
Dynamic random access memory (DRAM) stores data in a capacitor. These capacitors leak charge so the information fades unless the charge is refreshed periodically. Because of this refresh requirement, ...
imec, the research and innovation hub in nanoelectronics, has presented a dynamic random-access memory (DRAM) cell architecture that implements two indium-gallium-zinc-oxide thin-film transistors ...
TOKYO — Toshiba Corp. has developed a one-transistor, no-capacitor cell structure that it claims solves the difficulties encountered in producing DRAMs in sub-0.1-micron process technology. The ...
This week, at the 2020 International Electron Devices Meeting, imec, a world-leading research and innovation hub in nanoelectronics and digital technologies, presents a novel dynamic random-access ...
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