TOKYO — Toshiba Corp. has developed a one-transistor, no-capacitor cell structure that it claims solves the difficulties encountered in producing DRAMs in sub-0.1-micron process technology. The ...
Something to look forward to: The memory industry is known for its conservative approach, often favoring incremental improvements over revolutionary changes. But as we look toward the end of the ...
TOKYO — Toshiba Corp. said it is leveraging its deep-trench-capacitor DRAM structure, which it has championed as a process driver since the 0.25-micron generation, to migrate its system-on-chip ...
This week, at the 2020 International Electron Devices Meeting, imec, a world-leading research and innovation hub in nanoelectronics and digital technologies, presents a novel dynamic random-access ...
SANTA CLARA, Calif., May 05, 2021 (GLOBE NEWSWIRE) -- Applied Materials, Inc. today announced materials engineering solutions that give its memory customers three new ways to further scale DRAM and ...
On June 4, 1968, Robert Dennard was granted a patent for a single transistor, single capacitor DRAM cell design idea. This doesn’t sound earth-shattering today, but back in the sixties, this was a ...
The DRAM business has always been challenging. Over the years, DRAM suppliers have experienced a number of boom and bust cycles in a competitive landscape. But now, the industry faces a cloudy, if not ...
Apple, Samsung and others are developing the next wave of smartphones and tablets. OEMs want to integrate new memory schemes that provide more bandwidth at lower power. But there are some challenges ...
An ultrathin ferroelectric capacitor, designed by researchers from Japan, demonstrates strong electric polarization despite ...
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