CEA-Leti research engineers have demonstrated for the first time a scalable hafnia-zirconia-based ferroelectric capacitor platform integrated into the back-end-of-line (BEOL) at the 22 nm FD-SOI ...
TOKYO — Symetrix Corp. (Colorado Springs, Co.) has licensed its Non-Destructive Read Out (NDRO) ferroelectric RAM technology to Oki Electric Industry Co., Ltd., who will also serve as foundry for the ...
CEA-Leti has reported the world’s-first demonstration of 16-kbit ferroelectric random-access memory (FeRAM) arrays at the 130nm node advancing this energy-saving technology closer to commercialisation ...
To push access times toward those of SRAM while achieving much higher densities, embedded DRAM needs a structure that differs from both commodity DRAM and conventional embedded DRAM. The challenge is ...
Resetting industry benchmarks for density and operating speed, the company’s non-volatile ferroelectric random access memory (FeRAM) prototype achieves a storage density of 128 Mb and read/write ...
SAN DIEGO — Researchers detailed several fresh approaches to smoothing the integration of large amounts of high-performance embedded memory onto the latest ASICs at the Custom Integrated Circuits ...
SAN DIEGO — Researchers detailed several fresh approaches to smoothing the integration of large amounts of high-performance embedded memory onto the latest ASICs at the Custom Integrated Circuits ...
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