Li Y, Zhao F, Cheng X, Liu H, Zan Y, Li J, Zhang Q, Wu Z, Luo J, Wang W. Four-Period Vertically Stacked SiGe/Si Channel FinFET Fabrication and Its Electrical Characteristics. Nanomaterials (Basel).

The IC industry entered the finFET era in 2011, when Intel leapfrogged the competition and rolled out the newfangled transistor technology at the 22nm node. Intel hopes to ramp up its ...

When making the transition from planar devices to FinFETs, IP design challenges arise that require education and experience when dealing with the complexities. Since the inception of the ...

Imec reports improved performance for both Ge-based n-type FinFETs and Ge-based p-type gate-all-around (GAA) devices. For Ge n-type FinFETs, pre-gate stack process optimization dramatically improved ...

The gate-all-around (GAA) semiconductor manufacturing process, also known as gate-all-around field-effect transistor (GAA-FET) technology, defies the performance limitations of FinFET by reducing the ...

Infineon Technologies has announced that its researchers have completed testing of a full integrated circuit built with multigate FinFet transistors. Infineon Technologies has announced that its ...

SEMATECH experts reported on innovative approaches to realize advanced CMOS logic and memory device technologies and 3D through-silicon via (TSV) manufacturing at the International VLSI Technology, ...

The IC industry is already weeding out the candidates. In 2005, the Semiconductor Research Corp. (SRC), a chip R&D consortium, launched the Nanoelectronics Research Initiative (NRI), a group that is ...

At DAC this year, it was impossible to go to a vision talk, keynote, or other high-profile event without hearing about how FinFETs were going to save us and keep Moore's Law going for a little longer.