Flash memory has made incredible capacity strides thanks to monolithic 3D processing enabled by the stacking of more than 200 layers, which is on its way to 1.000 layers in future generations.[1] But ...
VCT (vertical channel transistor) DRAM is one of the first achievements towards this goal, with Samsung expected to complete the initial development of VCT DRAM in 2025, with 3D DRAM hitting the ...
TL;DR: SK hynix unveiled a 30-year DRAM roadmap featuring 4F2 Vertical Gate and 3D DRAM technologies to enhance performance, integration, and power efficiency beyond 10nm scales. These innovations aim ...
Something to look forward to: The memory industry is known for its conservative approach, often favoring incremental improvements over revolutionary changes. But as we look toward the end of the ...
Process and device technologies have had to overcome numerous technical challenges as DRAM memory devices have transitioned between different cell architectures. When DRAM technology nodes went beyond ...
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