Nanoelectromechanical systems (NEMS) represent a transformative approach in the design of memory and logic devices, offering unprecedented energy efficiency and integration potential with standard ...

The storage element in NAND flash memory is the floating gate MOSFET transistor. These devices are similar to a standard MOSFET device, other than there is an addition isolated gate. When a NAND flash ...

Note: Removal of CeraMemory and CeraTape per company request. This article discusses two interesting memory (and spin-based logic) announcements. At the 2023 SNIA Storage Developers Conference (SDC) a ...

Schematic illustration showing how nanoscale magnetic skyrmions flow through an H-shaped junction to perform logic operations. The device demonstrates fluid-like collective behavior of skyrmions in ...

The chip industry is progressing rapidly toward 3D-ICs, but a simpler step has been shown to provide gains equivalent to a whole node advancement — extracting distributed memories and placing them on ...

An ultrathin ferroelectric capacitor, designed by researchers from Japan, demonstrates strong electric polarization despite ...

A review paper by scientists at Beijing Institute of Graphic Communication presented  a thorough review of the existing ...

A team of researchers has proposed a new concept for magnet-based memory devices, which might revolutionize information storage devices owing to their potential for large-scale integration, ...