Nexperia has created a 20A 1,200V SiC Schottky diode, using a merged PiN structure to increase surge current capability. For 10ms half-sine pulses its rating is 135A, 91A 2 /s at 25°C, and 100A, 50A 2 ...

Vishay Intertechnology has announced the third generation of its 650 and 1,200V SiC (silicon carbide) Schottky diodes, in a 2.6 x 5.2mm surface-mount package. The DO-221AC package, branded ‘SlimSMA HV ...

Front-end limiter circuits using Schottky and PIN diodes can provide needed protection in communications and other RF systems. However, designers still must deal with the upper-frequency limit problem ...

This application note presents the real Schottky diodes as the best choice for lowest forward voltage drop. This document describes the low, medium and high voltage level applications, as well as ...

Vishay Intertechnology, Inc. has announced the launch of three new Gen 3 650 V and 1200 V silicon carbide Schottky diodes, specifically the VS-3C01EJ12-M3, VS-3C02EJ07-M3, and VS-3C02EJ12-M3, which ...

New surface-mount automotive-grade silicon-carbide (SiC) Schottky barrier diodes (SBDs) from ROHM Semiconductor are intended to improve insulation resistance by increasing the creepage distance ...

This course is primarily aimed at first year graduate students interested in engineering or science, along with professionals with an interest in power electronics and semiconductor devices . It is ...